advanced power p-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss -30v low on-resistance r ds(on) 53m fast switching i d -5a description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-amb thermal resistance junction-ambient 3 max. 62.5 /w data and specifications subject to change without notice thermal data parameter total power dissipation 2 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 0.016 storage temperature range continuous drain current 3 - 4 pulsed drain current 1 - 20 parameter drain-source voltage gate-source voltage continuous drain current 3 20020513 AP4953M rating - 30 20 - 5 the advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost- effectiveness. the so-8 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as dc/dc converters. s1 g1 s2 g2 d1 d1 d2 d2 so-8 g2 d2 s2 g1 d1 s1
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -30 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =-1ma - -0.1 -v/ r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-5a - - 53 m v gs =-4.5v, i d =-4a - - 90 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-5a - 6 - s i dss drain-source leakage current (t j =25 o c) v ds =-30v, v gs =0v - - -1 ua drain-source leakage current (t j =70 o c) v ds =-24v, v gs =0v - - -25 ua i gss gate-source leakage v gs =-- na q g total gate charge 2 i d =-5a - 20 - nc q gs gate-source charge v ds =-15v - 3.5 - nc q gd gate-drain ("miller") charge v gs =-10v - 2 - nc t d(on) turn-on delay time 2 v ds =-15v - 12 - ns t r rise time i d =-1a - 20 - ns t d(off) turn-off delay time r g =6 , v gs =-10v - 45 - ns t f fall time r d =15 -27- ns c iss input capacitance v gs =0v - 800 - pf c oss output capacitance v ds =-15v - 425 - pf c rss reverse transfer capacitance f=1.0mhz - 110 - pf source-drain diode symbol parameter test conditions min. typ. max. units i s continuous source current ( body diode ) v d =v g =0v , v s =-1.2v - - -1.67 a v sd forward on voltage 2 t j =25 , i s =-1.7a, v gs =0v - - -1.2 v notes: 1.pulse width limited by max. junction temperature. 2.pulse width < 300us , duty cycle < 2%. 3.surface mounted on 1 in 2 copper pad of fr4 board ; 135 /w when mounted on min. copper pad. AP4953M 20v 100
AP4953M fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature 0 5 10 15 20 01234 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =25 o c -10v -8.0v -6.0v v gs =-4.0v 0 5 10 15 20 012345 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =150 o c -10v -8.0v -6.0v v gs =-4.0v 30 40 50 60 70 80 34567891011 -v gs (v) r ds(on) (m ) i d =-5a t c =25 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) v gs =10v i d =5a
fig 5. maximum drain current v.s. fig 6. typical power dissipation case temperature fig 7. maximum safe operating area fig 8. effective transient thermal impedance AP4953M 0.01 0.1 1 10 100 0.1 1 10 100 -v ds (v) -i d (a) t c =25 o c single pulse 1ms 10ms 100ms 1s 10s d c 0 1 2 3 4 5 6 25 50 75 100 125 150 t c , case temperature ( o c) -i d , drain current (a) 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =135 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0 0.5 1 1.5 2 2.5 3 0 50 100 150 t c , case temperature ( o c) p d (w)
AP4953M fig 9. gate charge characteristics fig 10. typical capacitance characteristics fig 11. forward characteristic of fig 12. gate threshold voltage v.s. reverse diode junction temperature 10 100 1000 10000 1 5 9 1317212529 -v ds (v) c (pf) f =1.0mhz ciss coss crss 0.01 0.10 1.00 10.00 100.00 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 -v sd (v) -i s (a) t j =25 o c t j =150 o c 0 2 4 6 8 10 12 14 0 5 10 15 20 25 30 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d = -5a v ds = -15v 0 1 2 3 -50 0 50 100 150 t j , junction temperature ( o c) v gs(th) (v)
AP4953M fig 13. switching time circuit fig 14. switching time waveform fig 15. gate charge circuit fig 16. gate charge waveform t d(on) t r t d(off) t f v ds v gs 10% 90% q v g -10v q gs q gd q g charge 0.5 x rated v ds to the oscilloscope -10 v d g s v ds v gs r g r d 0.5 x rated v ds to the oscilloscope d g s v ds v gs i d i g
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